HN29W25611 datasheet(4/43 Pages) HITACHI

Part #	HN29W25611

Description	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 43 page

HN29W25611 Series

4

Block Diagram

16384

× (2048 + 64) × 8

memory matrix

X-decoder

Data register (2048 + 64)

Input

data

control

Sector

address

buffer

Y-address

counter

2048 + 64

VSS

RES

Y-gating

Y-decoder

Read/Program/Erase control

Data

input

buffer

CE

OE

WE

SC

I/O0

to

I/O7

RDY/

Busy

VCC

CDE

Multiplexer

Control

signal

buffer

Data

output

buffer

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Similar Part No. - HN29W25611

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	HN29W25611T	331Kb / 42P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
Hitachi Semiconductor	HN29W25611T-50H	331Kb / 42P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

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Similar Description - HN29W25611

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	HN29V25611AT-50H	349Kb / 47P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
Hitachi Semiconductor	HN29W25611T	331Kb / 42P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
Renesas Technology Corp	HN29V25611AT-50	351Kb / 47P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
Mitsubishi Electric Sem...	M5M29F25611VP	499Kb / 36P	MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
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Hitachi Semiconductor	HN29V51211	306Kb / 42P	512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
Renesas Technology Corp	HN29V102414	352Kb / 48P	1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2
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Samsung semiconductor	K9K2G08U0A	850Kb / 34P	256M x 8 Bit NAND Flash Memory
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HN29W25611 Datasheet(PDF) 4 Page - Hitachi Semiconductor

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