HM62W8511H datasheet(11/13 Pages) HITACHI

Part #	HM62W8511H

Description	4M High Speed SRAM (512-kword x 8-bit)

Download	13 Pages

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HM62W8511H Series

11

Low V

CC Data Retention Characteristics (Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter

Symbol

Min

Typ*

1

Max

Unit

Test conditions

V

CC for data retention

V

DR

2.0

—

V

CC ≥ CS ≥ VCC – 0.2 V

(1) 0 V

≤ Vin ≤ 0.2 V or

(2) V

CC ≥ Vin ≥ VCC – 0.2 V

Data retention current

I

CCDR

—

40

600

µAV

CC = 3 V, VCC ≥ CS ≥ VCC – 0.2 V

(1) 0 V

≤ Vin ≤ 0.2 V or

(2) V

CC ≥ Vin ≥ VCC – 0.2 V

Chip deselect to data

retention time

t

CDR

0

—

ns

See retention waveform

Operation recovery time

t

R

5

——ms

Note:

1. Typical values are at V

CC = 3.0 V, Ta = +25˚C, and not guaranteed.

Low V

CC Data Retention Timing Waveform

VCC

3.0 V

2.2 V

0 V

CS

tCDR

tR

VCC ≥ CS ≥ VCC – 0.2 V

VDR

Data retention mode

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HM62W8511H Datasheet(PDF) 11 Page - Hitachi Semiconductor

HM62W8511H Datasheet(HTML) 11 Page - Hitachi Semiconductor

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