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HM628511HI Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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HM628511HI Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 13 page HM628511HI Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1035A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ. Features • Single 5.0 V supply : 5.0 V ± 10 % • Access time 12 /15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current : 160 / 140 mA (max) • TTL standby current : 60 / 50 mA (max) • CMOS standby current : 5 mA (max) • Center V CC and VSS type pinout • Temperature range: –40 to 85°C |
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