HM624100HLJP-12 datasheet(5/13 Pages) HITACHI

Part #	HM624100HLJP-12

Description	4M High Speed SRAM (1-Mword x 4-bit)

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HM624100H Series

5

DC Characteristics (Ta = 0 to +70

°C, V

CC = 5.0 V ± 10 %, VSS = 0V)

Parameter

Symbol Min

Typ*

1

Max

Unit

Test conditions

Input leakage current

II

LII

——2

µA

Vin = V

SS to V CC

Output leakage current

II

LOI

——2

µA

Vin = V

SS to V CC

Operation power

supply current

10 ns cycle I

CC

—

200

mA

Min cycle

CS = V

IL, lout = 0 mA

Other inputs = V

IH/VIL

12 ns cycle I

CC

—

180

15 ns cycle I

CC

—

160

Standby power supply

current

10 ns cycle I

SB

—

70

mA

Min cycle,

CS = V

IH,

Other inputs = V

IH/VIL

12 ns cycle I

SB

——60

15 ns cycle I

SB

——50

I

SB1

—

0.1

5

mA

f = 0 MHz

V

CC ≥ CS ≥ VCC - 0.2 V,

(1) 0 V

≤ Vin ≤ 0.2 V or

(2) V

CC ≥ Vin ≥ VCC - 0.2 V

—*

2

0.1*

2

1.2*

2

Output voltage

V

OL

—

0.4

V

I

OL = 8 mA

V

OH

2.4

—

V

I

OH = –4 mA

Notes: 1. Typical values are at V

CC = 5.0 V, Ta = +25°C

and not guaranteed.

2. This characteristics is guaranteed only for L-version.

Capacitance (Ta = +25

°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input capacitance*

1

Cin

—

6

pF

Vin = 0 V

Input/output capacitance*

1

C

I/O

——

8

pF

V

I/O = 0 V

Note:

1. This parameter is sampled and not 100% tested.

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HM624100HLJP-12 Datasheet(PDF) 5 Page - Hitachi Semiconductor

HM624100HLJP-12 Datasheet(HTML) 5 Page - Hitachi Semiconductor

Similar Part No. - HM624100HLJP-12

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