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AP4436GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4436GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 20V ▼ Capable of 2.5V gate drive RDS(ON) 32mΩ ▼ Surface mount package ID 6.4A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter 1 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Total Power Dissipation 2 Continuous Drain Current 3,V GS @ 4.5V 5.1 Pulsed Drain Current 1 30 Gate-Source Voltage ±12 Continuous Drain Current 3,V GS @ 4.5V 6.4 Parameter Rating Drain-Source Voltage 20 200805271 AP4436GM RoHS-compliant Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S S S S G D D D D SO-8 |
Similar Part No. - AP4436GM_14 |
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Similar Description - AP4436GM_14 |
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