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AP4412GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4412GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 25V ▼ Simple Drive Requirement RDS(ON) 33mΩ ▼ Fast Switching ID 7A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice 200415051-1/6 AP4412GM Pb Free Plating Product Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage ±20 Continuous Drain Current 3 7 Continuous Drain Current 3 5.8 Pulsed Drain Current 1 30 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S S S G D D D D SO-8 G D S |
Similar Part No. - AP4412GM_14 |
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Similar Description - AP4412GM_14 |
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