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FAN5059 Datasheet(PDF) 9 Page - Fairchild Semiconductor |
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FAN5059 Datasheet(HTML) 9 Page - Fairchild Semiconductor |
9 / 18 page PRODUCT SPECIFICATION FAN5059 REV. 1.0.4 8/14/03 9 Table 2. FAN5059 Application Bill of Materials (Components based on Worst Case Analysis—See Appendix for Details) Notes: 1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply with Intel dI/dt requirements. L1 may be omitted if desired. 2. For 17.4A designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer to Applications Bulletins AB-8 and AB-15. *Refer to Appendix for values. Reference Manufacturer Part # Quantity Description Requirements/Comments C1 AVX TAJB475M010R5 1 4.7µF, 10V Capacitor C2, C5 Panasonic ECU-V1C105ZFX 2 1µF, 16V Capacitor C3-4,C6 Panasonic ECU-V1H104ZFX 3 100nF, 50V Capacitor C7-9 Sanyo 6MV1000FA 3 1000µF, 6.3V Electrolytic C10-12 Any 3 22µF, 6.3V Capacitor Low ESR CIN Sanyo 10MV1200GX * 1200µF, 10V Electrolytic IRMS = 2A COUT Sanyo 6MV1500GX * 1500µF, 6.3V Electrolytic ESR ≤ 44mΩ D1 Motorola MBRD835L 1 8A Schottky Diode L1 Any Optional 2.5µH, 8A Inductor DCR ~ 10m Ω See Note 1. L2 Any 1 1.3µH, 20A Inductor DCR ~ 2m Ω Q1 Fairchild FDB6030L 1 N-Channel MOSFET RDS(ON) = 20mΩ @ VGS = 4.5V See Note 2. Q2 Fairchild FDB7030BL 1 N-Channel MOSFET RDS(ON) = 10mΩ @ VGS = 4.5V See Note 2. Q3-5 Fairchild FDB4030L 3 N-Channel MOSFET R1 Any 1 33 Ω R2-3 Any 2 4.7 Ω R4 Any 1 10K Ω R5 Any 1 * R6 Any 1 10 Ω R7 Any 1 * U1 Fairchild FAN5059M 1 DC/DC Controller |
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