Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Fast Switching Characteristic

30V

▼ Lower Gate Charge

45mΩ

▼ Small Footprint & Low Profile Package

5.5A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

62.5

℃

/W

Data and specifications subject to change without notice

AP2604GY-HF

Halogen-Free Product

Parameter

Rating

Drain-Source Voltage

30

Gate-Source Voltage

+20

Continuous Drain Current

5.5

Continuous Drain Current

4.4

Pulsed Drain Current

1

20

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.016

Storage Temperature Range

Total Power Dissipation

2

-55 to 150

201201062

Thermal Data

Parameter

1

G

D

S

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The S0T-26 package is widely used for all commercial-industrial

applications.

D

D

D

D

G

S

SOT-26