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NEL2012F03-24 Datasheet(PDF) 1 Page - NEC |
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NEL2012F03-24 Datasheet(HTML) 1 Page - NEC |
1 / 12 page The information in this document is subject to change without notice. SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER 1996 © Document No. P11768EJ1V0DS00 (1st edition) Date Published June 1997 N Printed in Japan PRELIMINARY DATA SHEET DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc. ORDERING INFORMATION Part Number Package Outline NEL2012F03-24 F03 PACKAGE DIMENSIONS PIN CONNECTIONS (Unit: mm) 1. EMITTER 2. BASE 3. COLLECTOR 2 × 3.3 ± 0.3 φ 2.8 ± 0.2 18.9 ± 0.3 14.2 ± 0.3 6.35 ± 0.4 1 2 3 |
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