Electronic Components Datasheet Search |
|
NE71383B Datasheet(PDF) 2 Page - NEC |
|
NE71383B Datasheet(HTML) 2 Page - NEC |
2 / 16 page 2 NE713 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Gate to Source Leak Current IGSO − 1.0 10 µAVGS = −5 V Saturated Drain Current IDSS 20 40 120 mA VDS = 3 V, VGS = 0 V Gate to Source Cut off Voltage VGS (off) −0.5 −1.1 −3.5 V VDS = 3 V, ID = 100 µA Transconductance gm 20 50 − mS VDS = 3 V, ID = 10 mA Noise Figure NF 0.6 0.7 dB f = 4 GHz VDS = 3 V Associated Gain Ga 11.5 14.0 dB ID = 10 mA Noise Figure NF 1.6 1.8 dB f = 12 GHz Associated Gain Ga 8.0 9.5 dB Output Power at 1 dB Gain Compression Point Po (1 dB) 14.5 dBm f = 12 GHz VDS = 3 V ID = 30 mA Thermal Resistance Rth 190 °C/W NE71300 Channel to case 450 °C/W NE71383B 1.88 ± 0.3 PACKAGE DIMENSIONS (Unit : mm) [NE71383B] 1.0 ± 0.1 3 1. 2. 3. 4. Source Drain Source Gate 4 2 1 4.0 MIN. 4.0 MIN. |
Similar Part No. - NE71383B |
|
Similar Description - NE71383B |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |