© 2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJN3314R Rev. 1.1.2

1

November 2013

FJN3314R

NPN Epitaxial Silicon Transistor with Bias Resistor

Features

• 100 mA Output Current Capability

Application

• Switching, Interface, and Driver Circuits

• Inverters

• Digital Applications in Industrial Segments

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Part Number

Top Mark

Package

Packing Method

FJN3314RTA

R3314

TO-92 3L

Ammo

Symbol

Parameter

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

10

V

Collector Current

100

mA

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

Equivalent Circuit

C

R1

E

B

R2

1. Emitter 2. Collector 3. Base

TO-92

1

Description

Transistors with built-in resistors can be excellent

space- and cost-saving solutions by reducing compo-

nent count and simplifying circuit design.