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NE6510179 Datasheet(PDF) 3 Page - California Eastern Labs

Part # NE6510179
Description  NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
Download  10 Pages
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE6510179 Datasheet(HTML) 3 Page - California Eastern Labs

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TYPICAL PERFORMANCE CURVES (TA = 25°C)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
Gate Voltage, GV (V)
DRAIN CURRENT vs.
DRAIN VOLTAGE
Drain Voltage, VD (V)
2.00
1.50
1.00
0.50
2.50
0
0.8
0.6
0.4
0.2
1.00
0
-.80
-1.0
-.60
-.20
0.00
-.40
NE6510179A
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
Frequency, GHz
ARRHENIUS PLOTS vs.
JUNCTION TEMPERATURE
Junction Temperature, T/TCH (1/K/1000)
30
25
20
15
10
5
0.1
4.0
4.6 V, 300 mA
3.5 V, 150 mA
2.2 V, 200 mA
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+07
1.8
1.6
2
2.4
2.2
2.6
3
2.8
1.35E+06 Hrs
(TCH = 110
°C)
EA = 1.0EV
1805 Hrs
(TCH = 217
°C)
3
2.5
2.0
1.5
1.0
0.5
0
01
2
3
4
5
6
VGS =
0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V


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