PSMN2R2-40BS datasheet(1/15 Pages) PHILIPS

Part #	PSMN2R2-40BS

Description	N-channel 40 V 2.2 m standard level MOSFET in D2PAK

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

sources

1.3 Applications

 DC-to-DC convertors

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

[1]

Continuous current is limited by package

PSMN2R2-40BS

N-channel 40 V 2.2 m

Ω standard level MOSFET in D2PAK

Rev. 1 — 20 March 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

--40

V

ID

drain current

Tmb =25°C; VGS =10V;

see Figure 1

[1]

-

100

A

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

-

306

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

RDSon

drain-source on-state resistance

VGS =10V; ID =25A; Tj =100 °C;

see Figure 6

-

2.73

3.2

m

Ω

VGS =10V; ID =25A; Tj =25°C;

see Figure 6; see Figure 13

-

1.88

2.2

m

Ω

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =25A; VDS =20 V;

see Figure 14; see Figure 15

-25

-nC

QG(tot)

total gate charge

-

130

-

nC

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS =10V; Tj(init) =25 °C;

ID =100 A; Vsup ≤ 40 V; unclamped;

RGS =50 Ω

--1.24

J

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PSMN2R2-40BS Datasheet(PDF) 1 Page - NXP Semiconductors

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