AP30G120BSW-HF_14 datasheet(3/4 Pages) A-POWER

Part #	AP30G120BSW-HF

Description	High Speed Switching

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

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AP30G120BSW-HF

Fig 7. SOA Characteristics

Fig 8. Effective Transient Thermal

Impedance

Fig 9. Saturation Voltage vs. VGE

Fig 10. Saturation Voltage vs. VGE

Fig11. Forward Characteristic of

Fig 12. Gate Charge Characterisitics

Diode

3

0

4

8

12

16

0

20406080

Q G , Gate Charge (nC)

I C =30 A

V CC =500V

0

2

4

6

8

10

04

8

12

16

20

V GE , Gate-Emitter Voltage(V)

I C =60 A

T C =25

o C

0

2

4

6

8

10

0

4

8

12

16

20

V GE , Gate-Emitter Voltage(V)

T C = 150

o C

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

1

10

0

0.8

1.6

2.4

3.2

V F , Forward Voltage (V)

T j =25

o C

T j =150

o C

I C =30 A

I C =15 A

I C =60 A

I C =30 A

I C =15 A

0.01

0.1

1

10

100

1000

1

10

100

1000

10000

V CE ,Collector - Emitter Voltage(V)

T c =25

o C

Single Pulse

10us

100us

1ms

10ms

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