NTTFS3A08PZTAG datasheet(4/6 Pages) ONSEMI

Part #	NTTFS3A08PZTAG

Description	-20 V, -15 A, Single P-Channel, 8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTTFS3A08PZ

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

18

14

10

8

6

4

2

0

800

1600

3200

4800

5600

6400

8000

60

50

40

30

20

10

0

1

2

3

4

5

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

1.0

0.7

0.6

0.5

0.4

0.3

0.1

1

10

Figure 11. Threshold Voltage

Figure 12. Single Pulse Maximum Power

Dissipation

TJ, TEMPERATURE (°C)

SINGLE PULSE TIME (s)

125

100

75

50

25

0

−25

−50

0.15

0.25

0.35

0.45

0.55

0.75

0.85

0.95

1.E+02

1.E−02

1.E−04

0

50

100

150

200

300

350

400

12

16

20

2400

4000

7200

VGS = 0 V

TJ = 25°C

f = 1 MHz

Ciss

Coss

Crss

0

4

2

6

14

18

8

10

12

16

VDS = −10 V

ID = −8 A

TJ = 25°C

QT

VGS

QGS

QGD

VDS

VGS = −4.5 V

VDD = −10 V

ID = −8 A

td(off)

tf

tr

td(on)

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.65

150

ID = −250 mA

250

1.E+00

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