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SSPL50N30H Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSPL50N30H Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 8 page  SSPL50N30H ©Silikron Semiconductor CO.,LTD. 2014.07.09 Version : 1.2 page 1 of 8 www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ① 50 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ① 31 IDM Pulsed Drain Current ② 192 PD @TC = 25°C Power Dissipation ③ 390 W Linear Derating Factor 3.12 W/°C VDS Drain-Source Voltage 300 V VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy @ L=60mH 4465 mJ IAS Avalanche Current @ L=60mH 12.2 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C VDSS 300V RDS(on) 45m Ω(typ.) ID 50A ① TO-247 Marking and Pin Assignment Schematic Diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
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