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KSC5603D Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # KSC5603D
Description  NPN Silicon Transistor, Planar Silicon Transistor
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSC5603D Datasheet(HTML) 1 Page - Fairchild Semiconductor

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© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC5603D Rev. C2
1
February 2010
KSC5603D
NPN Silicon Transistor, Planar Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
3
A
ICP
*Collector Current (Pulse)
6
A
IB
Base Current (DC)
2
A
IBP
*Base Current (Pulse)
4
A
PC
Power Dissipation(TC=25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 to +150
°C
Symbol
Parameter
Rating
Units
RθJC
Thermal Resistance
Junction to Case
1.25
°C/W
RθJA
Junction to Ambient
80
°C/W
TL
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
270
°C
1.Base
2.Collector
3.Emitter
1
TO-220
C
B
E
Equivalent Circuit


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