KSC5502DT datasheet(3/11 Pages) FAIRCHILD

Part #	KSC5502DT

Description	NPN Triple Diffused Planar Silicon Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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KSC5502D / KSC5502DT Rev. 1.1.0

3

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min

Typ.

Max.

Unit

tfr

Diode Froward Recovery

Time (di/dt=10 A/

μs)

IF = 0.2 A

650

ns

IF = 0.4 A

740

IF = 1 A

785

VCE(DSAT) Dynamic Saturation Voltage

IC = 0.4 A, IB1 = 80 mA,

VCC = 300 V

at 1

μs7.2

V

at 3

μs1.8

IC = 1 A, IB1 = 200 mA,

VCC = 300 V

at 1

μs18.0

at 3

μs6.0

Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)

tON

Turn-On Time

IC = 0.4 A, IB1 = 80 mA,

IB2 = 0.2 A, VCC = 300 V,

RL = 750 Ω

TC = 25°C175

350

ns

TC = 125°C185

tOFF

Turn-Off Time

TC = 25°C2.1

3.0

μs

TC = 125°C2.6

tON

Turn-On Time

IC = 1 A, IB1 = 160 mA,

IB2 = 160 mA,

VCC = 300 V,

RL = 300 Ω

TC = 25°C240

450

ns

TC = 125°C310

tOFF

Turn-Off Time

TC = 25°C3.7

5.0

μs

TC = 125°C4.5

Inductive Load Switching (VCC = 15 V)

tSTG

Storage Time

IC = 0.4 A, IB1 = 80 mA,

IB2 = 0.2 A, VZ = 300 V,

LC = 200 H

TC = 25°C1.2

2.0

μs

TC = 125°C1.5

tF

Fall Time

TC = 25°C90

200

ns

TC = 125°C65

tC

Cross-Over Time

TC = 25°C185

350

ns

TC = 125°C145

tSTG

Storage Time

IC = 0.8 A, IB1 = 160 mA,

IB2 = 160 mA,

VCC = 300 V,

LC = 200 H

TC = 25°C

3.30

4.50

μs

TC = 125°C3.75

tF

Fall Time

TC = 25°C90

250

ns

TC = 125°C160

tC

Cross-over Time

TC = 25°C300

600

ns

TC = 125°C570

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