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SSFT3904 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSFT3904 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
1 / 8 page SSFT3904 ©Silikron Semiconductor CO., LTD. 2012.11.01 Version: 2.5 page 1 of 8 www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 110 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 80 IDM Pulsed Drain Current② 440 PD @TC = 25°C Power Dissipation③ 100 W Linear Derating Factor 0.55 W/°C VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy @ L=0.1mH② 320 mJ IAR Avalanche Current @ L=0.1mH② 80 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C VDSS 30V RDS(on) 2.6m Ω (typ.) ID 110A TO220 Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
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