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SSF8810 Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF8810 Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 7 page  SSF8810 ©Silikron Semiconductor CO., LTD. 2013.09.20 Version: 1.0 page 2 of 7 www.silikron.com Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 20 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 14 20 m Ω VGS=4.5V,ID = 7A — 18 — TJ = 125°C — 20 28 m Ω VGS=2.5V,ID = 5.5A — 24 — TJ = 125°C — 38 50 m Ω VGS=1.8V,ID = 5A — 42 — TJ = 125°C VGS(th) Gate threshold voltage 0.6 — 1 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 20V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS = 4.5V — — -100 VGS = -4.5V — — 10 uA VGS = 10V — — -10 VGS = -10V Qg Total gate charge — 10 — nC ID = 7A, VDS=10V, VGS = 4.5V Qgs Gate-to-Source charge — 2.3 — Qgd Gate-to-Drain("Miller") charge — 3 — td(on) Turn-on delay time — 7.3 — ns VGS=4.5V, VDS =10V, RGEN=3Ω,ID =6.5 tr Rise time — 60 — td(off) Turn-Off delay time — 18 — tf Fall time — 5.9 — Ciss Input capacitance — 632 — pF VGS = 0V VDS = 10V ƒ = 1MHz Coss Output capacitance — 142 — Crss Reverse transfer capacitance — 134 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 8 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 25 A V SD Diode Forward Voltage — — 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 35 — nS TJ = 25°C, IF =7A, di/dt = 10 0A/μs Qrr Reverse Recovery Charge — 7.2 — nC |
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