STGW60H65DF datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STGW60H65DF

Description	60 A, 650 V field stop trench gate IGBT with very fast diode

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STGW60H65DF

Electrical characteristics

Doc ID 023011 Rev 4

3/13

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 60 A

1.9

V

VGE = 15 V, IC = 60 A

TJ = 150 °C

2.1

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

6.0

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 650 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-

7150

345

125

-

pF

Qg

Total gate charge

VCC = 520 V, IC = 60 A,

VGE = 15 V

-206

-

nC

Qge

Gate-emitter charge

-

60

-

nC

Qgc

Gate-collector charge

-

70

-

nC

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

-

67

46

1043

-

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

TJ = 150 °C

-

64

49

990

-

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

-

41

165

34

-

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

TJ = 150 °C

-

49

169

78

-

ns

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