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SSF6010A Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD.

Part # SSF6010A
Description  Advanced trench process technology
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Manufacturer  SILIKRON [Silikron Semiconductor Co.,LTD.]
Direct Link  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF6010A Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD.

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©Silikron Semiconductor Corporation
2010.12.15
Version: 1.1
page
2of5
SSF6010A
Qg
Total gate charge
45
nC
ID=30A
VDD=30V
VGS=10V
Qgs
Gate-to-Source charge
4.2
Qgd
Gate-to-Drain("Miller") charge
15
td(on)
Turn-on delay time
14.6
nS
VDD=30V
ID=2A ,RL=15Ω
RG=2.5Ω
VGS=10V
tr
Rise time
14.2
td(off)
Turn-Off delay time
40
tf
Fall time
7.3
Ciss
Input capacitance
1480
pF
VGS=0V
VDS=25V
f=1.0MHZ
Coss
Output capacitance
190
Crss
Reverse transfer capacitance
135
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
IS
Continuous Source Current
(Body Diode)
75
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
300
VSD
Diode Forward Voltage
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
trr
Reverse Recovery Time
33
nS
TJ=25ْC,IF=60A
di/dt=100A/μs ③
Qrr
Reverse Recovery Charge
61
nC
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Gate charge test circuit:
Vdd
RL
RG
1mA
Vgs
EAS test circuit:
VDD
BVdss
L
R G
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C


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