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SSF6010A Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF6010A Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 5 page ©Silikron Semiconductor Corporation 2010.12.15 Version: 1.1 page 2of5 SSF6010A Qg Total gate charge — 45 — nC ID=30A VDD=30V VGS=10V Qgs Gate-to-Source charge — 4.2 — Qgd Gate-to-Drain("Miller") charge — 15 — td(on) Turn-on delay time — 14.6 — nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 14.2 — td(off) Turn-Off delay time — 40 — tf Fall time — 7.3 — Ciss Input capacitance — 1480 — pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 190 — Crss Reverse transfer capacitance — 135 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 75 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 300 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time — 33 — nS TJ=25ْC,IF=60A di/dt=100A/μs ③ Qrr Reverse Recovery Charge — 61 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit: Vdd RL RG 1mA Vgs EAS test circuit: VDD BVdss L R G Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C |
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