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SSF4607D Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF4607D Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 9 page  SSF4607D ©Silikron Semiconductor CO.,LTD. 2011.03.22 Version : 1.0 page 2 of 9 www.silikron.com Electrical Characterizes @T A=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage -30 — — V VGS = 0V, ID = -250μA RDS(on) Static Drain-to-Source on-resistance — 19 35 mΩ VGS=-10V,ID = -6A — 29 58 VGS=-4.5V,ID=-5A VGS(th) Gate threshold voltage -1.2 — -2.4 V VDS = VGS, ID = -250μA — -1.4 — TJ = 125℃ IDSS Drain-to-Source leakage current — — -1 μA VDS = -24V,VGS = 0V IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V — — -100 VGS = -20V Qg Total gate charge — 27 — nC ID = -20A, VDS=-25V, VGS = -10V Qgs Gate-to-Source charge — 3.6 — Qgd Gate-to-Drain("Miller") charge — 9.1 — td(on) Turn-on delay time — 10.7 — nS VGS=-10V, VDS =-15V, RL=0.75Ω,ID =-20A tr Rise time — 39 — td(off) Turn-Off delay time — 25.8 — tf Fall time — 6.4 — Ciss Input capacitance — 1188 — pF VGS = 0V, VDS =-15V, ƒ = 1MHz Coss Output capacitance — 173 — Crss Reverse transfer capacitance — 139 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -25① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — -100 A V SD Diode Forward Voltage — -0.77 -1 V IS=-1A, VGS=0V trr Reverse Recovery Time — 23 — nS TJ = 25°C, IF =-20A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 14 — nC |
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