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ERZV20D331 Datasheet(PDF) 11 Page - Panasonic Semiconductor |
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ERZV20D331 Datasheet(HTML) 11 Page - Panasonic Semiconductor |
11 / 20 page Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately. “ZNR” Transient/Surge Absorbers (Type D) – 14 – 30 40 50 60 70 80 90 100 200 300 400 500 600 700 800 900 1000 2000 471 431 391 361 511 471 431 391 361 331 271 241 221 201 511 271 201 151 121 101 820 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 241 221 331 151 121 101 820 Test Current Waveform 10 -6 to 10-3 A: Direct Current 10 -1 to 104 A: 8/20 μs Current (A) 10000 1000 100 10 20 100 1000 10000 1 10 4Times 10 5Times 10 6Times Impulse Width (μs) 5 min. interval 2 min. interval 10 sec. interval 2 times : up to 10 times : up to 10 6 times : 1000 100 10 1 0.1 20 100 1000 10000 10 2Times 10 3Times 10 4Times 10 5Times 10 6Times Impulse Width (μs) 5 min. interval 2 min. interval 10 sec. interval 2 times : up to 10 times : up to 10 6 times : 680 560470 270 220 180 390 330 180 680 560 470 390 330 270 220 400 300 200 100 90 80 70 60 50 40 30 7 6 5 20 10 9 8 10 –6 10 –5 10 –4 10 –3 10 –2 10 –1 10 0 10 1 10 2 10 3 10 4 10 5 3 4 Current (A) Test current waveform 10 –6 to 10–3 A: Direct current 10 –1 to 103 A: 8/20 μs Max. Clamping Voltage Max. Leakage Current ERZV09D820 to ERZV09D511 ERZV09D180 to ERZV09D680 ERZV09D820 to ERZV09D511 ERZV09D180 to ERZV09D680 ■ Typical Characteristics Voltage vs. Current Impulse Derating (Relation between impulse width and impulse current multiple) Aug. 2012 01 |
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