SSF2610E

Drain-Source Breakdown Voltage

BV

V =0V I

DSS

GS

20

V

Zero Gate Voltage Drain Current

I

V =20V,V =0V

1

μA

DSS

DS

GS

V =±4.5V,V =0V

±100

nA

GS

DS

Gate-Body Leakage Current

V =±10V,V =0V

±10

uA

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.6

0.75

1

V

V =4.5V, I

GS

11

14

mΩ

14

18

mΩ

Drain-Source On-State Resistance

V =1.8V, I

GS

20

23

mΩ

Forward Transconductance

g

V =10V,I

FS

DS

5

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

600

PF

lss

Output Capacitance

330

PF

V =8V,V

DS

F=1.0MHz

140

PF

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

10

20

nS

d(on)

Turn-on Rise Time

t

11

25

nS

r

Turn-Off Delay Time

35

70

nS

V =10V,I

DD

V =4.5V,R

Turn-Off Fall Time

GS

30

60

nS

Total Gate Charge

Q

10

15

nC

g

Gate-Source Charge

2.3

nC

V =10V,I

Gate-Drain Charge

DS

=4.5V

3

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1.5A

0.84

1.2

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

v1.0