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SSF1116A Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF1116A Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 5 page ©Silikron Semiconductor Corporation 2010.12.1 Version: 1. 1 page 2of5 SSF1116A Qg Total gate charge — 110 nC ID=30A,VGS=10V VDD=30V Qgs Gate-to-Source charge — 22 — Qgd Gate-to-Drain("Miller") charge — 39 — td(on) Turn-on delay time — 20 nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 16 td(off) Turn-Off delay time — 69 tf Fall time — 19 Ciss Input capacitance — 3150 pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 350 Crss Reverse transfer capacitance — 240 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 75 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 300 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=60A,VGS=0V ③ trr Reverse Recovery Time - 54 — nS TJ=25ْC,IF=75A di/dt=100A/μs ③ Qrr Reverse Recovery Charge - 131 — μC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) EAS Test Circuit: Gate Charge Test Circuit: Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 50V,Id=45A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C |
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