2010-04-06

BF776

1

1

2

3

4

High Performance NPN Bipolar RF Transistor

• High performance low noise amplifier

• Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz

• For a wide range of non automotive applications

such as WLAN, WiMax, UWB, Bluetooth, GPS,

SDARs, DAB, LNB, UMTS/LTE and ISM bands

• Easy to use standard package with visible leads

• Pb-free (RoHS compliant) package

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BF776

R3s

1=B

2=E

3=C

4=E

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.0

3.5

V

Collector-emitter voltage

13

Collector-base voltage

13

Emitter-base voltage

1.2

Collector current

50

mA

Base current

3

≤ 90°C

200

mW

Junction temperature

150

°C

Ambient temperature

-55 ... 150

Storage temperature

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 300

K/W