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HAT2029 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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HAT2029 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page HAT2029R 3 Main Characteristics Ambient Temperature Ta (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) 4.0 3.0 2.0 1.0 0 50 100 150 200 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 10 µs 1 ms PW = 10 ms 50 40 30 20 10 0 24 6 8 10 10 V 6 V 3 V 3.5 V V = 1.5 V GS 4 V 5 V 50 40 30 20 10 0 12 3 4 5 Tc = –25 °C 75 °C 25 °C 1 Drive Operation Operation in this area is limited by R DS(on) Pulse Test V = 10 V Pulse Test DS Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Note 5 DC Operation (PW < 10 s) Ta = 25 °C 1 shot Pulse 1 Drive Operation 100 µs 2.5 V 2 V |
Similar Part No. - HAT2029 |
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Similar Description - HAT2029 |
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