HAT2019R datasheet(5/9 Pages) HITACHI

Part #	HAT2019R

Description	Silicon N Channel Power MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 9 page

HAT2019R

5

0.2

0.5

1

2

5

10

0.1

500

200

100

20

50

10

5

010

20

30

40

50

10000

3000

1000

300

100

30

10

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

50

40

30

20

10

0

816

24

32

40

0

5

500

20

50

10

0.2

0.5

1

2

5

10

20

di/dt = 20 A/µs

V

= 0, Ta = 25°C

GS

VGS

VDS

I

= 8 A

D

V

= 5 V

10 V

25 V

DD

V

= 25 V

10 V

5 V

DD

V

= 4 V, V

= 10 V

PW = 3 µs, duty < 1 %

GS

DD

t f

r

t

d(off)

t

d(on)

t

Reverse Drain Current

I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

Drain Current

I

(A)

D

Switching Characteristics

10

8

6

4

2

10

8

6

4

2

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HAT2019R Datasheet(PDF) 5 Page - Hitachi Semiconductor

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