HAF2007(L), HAF2007(S)

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain current

I

D1

(5)

—

—

A

V

Drain current

I

D2

——10

mA

V

Drain to source breakdown voltage V

(BR)DSS

60

——V

I

Gate to source breakdown voltage V

(BR)GSS

(16)

—

—

V

I

Gate to source breakdown voltage V

(BR)GSS

(–2.5)

—

—

V

I

Gate to source leak current

I

GSS1

—

—

100

µAV

I

GSS2

——50

µAV

I

GSS3

——1

µAV

I

GSS4

—

—

–100

µAV

Input current (shut down)

I

GS(op)1

—

0.8

—

mA

V

I

GS(op)2

—

0.35

—

mA

V

Zero gate voltege drain current

I

DSS

——10

µAV

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.25

V

I

Static drain to source on state

resistance

R

DS(on)

—

100

160

m

Ω

I

Note3

Static drain to source on state

resistance

R

DS(on)

—

70

100

m

Ω

I

Note3

Forward transfer admittance

|y

(5)

(18)

—

S

I

Note3

Output capacitance

Coss

—

(260)

—

pF

V

f = 1 MHz

Turn-on delay time

t

d(on)

—

(

)

—

µsI

Rise time

t

r

—

(

)

—

µsR

Turn-off delay time

t

d(off)

—

(

)

—

µs

Fall time

t

f

—

(

)

—

µs

Body–drain diode forward voltage

V

DF

—

(1.0)

—

V

I

Body–drain diode reverse

recovery time

t

rr

—

(

)

—

ns

I

diF/ dt =50A/

µs

Over load shut down

t

os1

—

(

)

—

ms

V

operation time

Note4

t

os2

—

(

)

—

ms

V

Note:

3. Pulse test

4. Include the time shift based on increasing of chennel temperature when operete under over load

condition.