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BB601M Datasheet(PDF) 5 Page - Hitachi Semiconductor

Part # BB601M
Description  Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Download  13 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

BB601M Datasheet(HTML) 5 Page - Hitachi Semiconductor

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BB601M
5
200
150
100
50
0
50
100
150
200
0
1
234
5
20
16
12
8
4
V
= 4 V
V
= V
G2S
G1
DS
R
=
22
k
G
Ω
27
kΩ
20
16
12
8
4
0
1
234
5
20
16
12
8
4
0
12
34
5
33
kΩ
39
kΩ
47
kΩ
56
kΩ
68 k
Ω
82 k
Ω
100
kΩ
2 V
V
= 1 V
G2S
V
= 5 V
R
= 33 k
Ω
DS
G
4 V
3 V
V
= 1 V
G2S
V
= 5 V
R
= 47 k
Ω
DS
G
3 V
4 V
2 V
Ambient Temperature
Ta (°C)
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Drain Current vs. Gate1 Voltage
Gate1 Voltage
V
(V)
G1
Drain Current vs. Gate1 Voltage
Gate1 Voltage
V
(V)
G1


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