BB503 datasheet(2/13 Pages) HITACHI

Part #	BB503

Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

Logo

2 / 13 page

BB503M

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DS

6V

Gate1 to source voltage

V

G1S

+6

–0

V

Gate2 to source voltage

V

G2S

+6

–0

V

Drain current

I

D

20

mA

Channel power dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

6

——V

I

D = 200µA

V

G1S = VG2S = 0

Gate1 to source breakdown

voltage

V

(BR)G1SS

+6

——V

I

G1 = +10 µA

V

G2S = VDS = 0

Gate2 to source breakdown

voltage

V

(BR)G2SS

+6

——V

I

G2 = +10 µA

V

G1S = VDS = 0

Gate1 to source cutoff current I

G1SS

—

+100

nA

V

G1S = +5V

V

G2S = VDS = 0

Gate2 to source cutoff current I

G2SS

—

+100

nA

V

G2S = +5V

V

G1S = VDS = 0

Gate1 to source cutoff voltage V

G1S(off)

0.5

0.7

1.0

V

DS = 5V, VG2S = 4V

I

D = 100µA

Gate2 to source cutoff voltage V

G2S(off)

0.5

0.7

1.0

V

DS = 5V, VG1S = 5V

I

D = 100µA

Drain current

I

D(op)

7

1013mA

V

DS = 5V, VG1 = 5V

V

G2S = 4V, RG = 47kΩ

Forward transfer admittance

|y

fs|

19

2429mS

V

DS = 5V, VG1 = 5V

V

G2S =4V

R

G = 47kΩ, f = 1kHz

Input capacitance

c

iss

1.4

1.7

2.0

pF

V

DS = 5V, VG1 = 5V

Output capacitance

c

oss

0.7

1.1

1.5

pF

V

G2S =4V, RG = 47kΩ

Reverse transfer capacitance c

rss

—

0.025

0.05

pF

f = 1MHz

Power gain

PG

17

22

—

dB

V

DS = 5V, VG1 = 5V

V

G2S =4V, RG = 47kΩ

Noise figure

NF

—

1.8

2.4

dB

f = 900MHz

Similar Part No. - BB503

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	BB503	64Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi Semiconductor	BB503C	64Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Renesas Technology Corp	BB503C	217Kb / 11P	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB503CCS-TL-E	217Kb / 11P	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB503M	300Kb / 11P	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

More results

Similar Description - BB503

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	BB501M	71Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB502M	65Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB501C	71Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB304M	68Kb / 12P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB305C	66Kb / 12P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Renesas Technology Corp	BB504M	100Kb / 10P	Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi Semiconductor	BB504C	80Kb / 11P	Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
	BB402M	64Kb / 11P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB405M	59Kb / 10P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB503C	64Kb / 13P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

More results

BB503 Datasheet(PDF) 2 Page - Hitachi Semiconductor

BB503 Datasheet(HTML) 2 Page - Hitachi Semiconductor

Similar Part No. - BB503

Similar Description - BB503

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL