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BB404M Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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BB404M Datasheet(HTML) 3 Page - Hitachi Semiconductor |
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3 / 11 page  BB404M 3 Main Characteristics Power Gain, Noise Figure Test Circuit Gate 2 Source Drain Gate 1 R G A I D VG1 VG2 VG2 Input (50 Ω) 1000p 36p 1000p L1 V = V D G1 R G BBFET RFC Output (50 Ω) L2 1000p 10p max 1000p 1000p 47k 1SV70 1000p 1000p 1000p 47k 47k 180k (VD=5V) 470k (VD=9V) V T V T Unit Resistance ( Ω) Capacitance (F) 1SV70 L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG) D(op) . |
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Similar Description - BB404M |
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