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BB301 Datasheet(PDF) 7 Page - Hitachi Semiconductor |
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BB301 Datasheet(HTML) 7 Page - Hitachi Semiconductor |
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7 / 10 page  BB301M 7 20 16 12 8 4 0 1 234 5 Forward Transfer Admittance vs. Gate1 Voltage Gate1Voltage VG1 (V) VDS = 5 V RG = 150 kΩ f = 1 kHz VG2S = 1 V 4 V 3 V 2 V Power Gain vs. Gate Resistance 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 Gate Resistance RG (kΩ) VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz Noise Figure vs. Gate Resistance 0 Gate Resistance RG (kΩ) 4 3 2 1 10 20 50 100 200 500 1000 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 30 25 20 15 10 5 0 Power Gain vs. Drain Current Drain Current ID (mA) 510 15 20 25 30 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz |
Similar Part No. - BB301 |
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Similar Description - BB301 |
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