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SST5912C Datasheet(PDF) 1 Page - Micross Components

Part # SST5912C
Description  Linear Systems replaces discontinued Siliconix / National SST5912C
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

SST5912C Datasheet(HTML) 1 Page - Micross Components

  SST5912C Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
Improved Direct Replacement for SILICONIX & NATIONAL SST5912C 
LOW NOISE (10KHz) 
en~ 4nV/√Hz 
HIGH TRANSCONDUCTANCE (100MHz) 
gfs ≥ 4000µS 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation (Total) 
500mW 
Maximum Currents 
Gate Current 
50mA 
Maximum Voltages 
Gate to Drain ‐25V 
Gate to Source ‐25V 
  
  
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VGS1 – VGS2 
Differential Gate to Source Cutoff Voltage 
‐‐ 
‐‐ 
40 
mV 
VDG = 10V, I= 5mA           
∆|VGS1 – VGS2 | / ∆T 
 
Differential Gate to Source Cutoff  
Voltage Change with Temperature 
‐‐ 
‐‐ 
40 
µV/°C 
VDG = 10V, ID = 5mA      
TA = ‐55°C to +125°C 
IDSS1  / IDSS2 
 
Gate to Source Saturation Current Ratio 
0.95 
‐‐ 
VDS = 10V, VGS = 0V 
|IG1 – IG2 | 
Differential Gate Current 
‐‐ 
‐‐ 
20 
nA 
VDG = 10V, ID = 5mA      
TA = +125°C  
gfs1 / gfs2 
 
Forward Transconductance Ratio
0.95 
‐‐ 
VDS = 10V, ID = 5mA, f = 1kHz 
CMRR 
Common Mode Rejection Ratio 
‐‐ 
85 
‐‐ 
dB 
VDG = 5V to 10V, I= 5mA         
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐25 
‐‐ 
 
 
 
I= ‐1µA, VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐1 
‐‐ 
‐5 
VDS = 10V, ID = 1nA 
VGS(F) 
Gate to Source Forward Voltage 
‐‐ 
0.7 
‐‐ 
I=  1mA, VDS = 0V 
VGS 
Gate to Source Voltage ‐0.3 
‐‐ 
‐4 
VDG = 10V, I= 5mA 
IDSS 
Gate to Source Saturation Current
3 
‐‐ 
40 
mA 
VDS = 10V, VGS = 0V 
IGSS 
Gate Leakage Current
3 
‐‐ 
‐1 ‐50  
pA 
VGS = ‐15V, VDS = 0V 
IG 
Gate Operating Current 
‐‐ 
‐1 ‐50 
VDG = 10V, I= 5mA 
gfs 
Forward Transconductance 
4000 
‐‐ 
10000  
µS 
 
 
VDG = 10V, ID= 5mA 
4000 
‐‐ 
10000 
gos 
Output Conductance 
‐‐ 
‐‐ 
100 
‐‐ 
‐‐ 
150 
CISS 
Input Capacitance 
‐‐ 
‐‐ 
pF 
 
VDG = 10V, I= 5mA, f = 1MHz 
CRSS 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.2 
NF 
Noise Figure 
‐‐ 
‐‐ 
dB 
VDG = 10V, I= 5mA, f = 10kHz, R= 100KΩ 
en 
Equivalent Input Noise Voltage 
‐‐ 
20 
nV/√Hz 
VDG = 10V, I= 5mA, f = 100Hz 
‐‐ 
10 
VDG = 10V, I= 5mA, f = 10kHz 
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired      2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator 
 
 
SST5912C
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix / National SST5912C
SST5912C Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
The SST5912C are monolithic dual JFETs. The
monolithic dual chip design reduces parasitics and
gives better performance at very high frequencies while
ensuring extremely tight matching. These devices are
an excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The SST5912C is a direct replacement for
discontinued Siliconix and National SST5912C.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Available Packages:
SST5912C in SOIC
SST5912C available as bare
die


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