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4AK18 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 4AK18
Description  Silicon N-Channel Power MOS FET Array
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

4AK18 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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4AK18
4
6
4
2
0
50
100
150
Ambient Temperature Ta (°C)
5
3
1
125
75
25
Condition : Channel Dissipation of
each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
20
10
0
50
100
150
Case Temperature TC (°C)
125
75
25
Condition : Channel Dissipation
of each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
100
10
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
30
3
0.1
0.3
1.0
3
10
30
100
Ta = 25°C
10
µs
0.3
1.0
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
8
4
2
10
0
1
2
3
4
0
5
VGS = 2 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
2.5 V


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Similar Description - 4AK18

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