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4AK18 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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4AK18 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 4AK18 4 6 4 2 0 50 100 150 Ambient Temperature Ta (°C) 5 3 1 125 75 25 Condition : Channel Dissipation of each die is identical Maximum Channel Dissipation Curve 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 20 10 0 50 100 150 Case Temperature TC (°C) 125 75 25 Condition : Channel Dissipation of each die is identical Maximum Channel Dissipation Curve 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 100 10 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 30 3 0.1 0.3 1.0 3 10 30 100 Ta = 25°C 10 µs 0.3 1.0 Typical Output Characteristics 6 Drain to Source Voltage VDS (V) 8 4 2 10 0 1 2 3 4 0 5 VGS = 2 V Pulse Test 10 V 5 V 4 V 3 V 3.5 V 2.5 V |
Similar Part No. - 4AK18 |
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Similar Description - 4AK18 |
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