4AK16 datasheet(3/9 Pages) HITACHI

Part #	4AK16

Description	Silicon N-Channel Power MOS FET Array

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Manufacturer	HITACHI [Hitachi Semiconductor]

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4AK16

3

Electrical Characteristics (Ta = 25°C) (1 Unit)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V

(BR)DSS

60

—

V

I

D = 10 mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

—

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

—

250

µAV

DS = 50 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.0

V

I

D = 1 mA, VDS = 10 V

Static drain to source on state

resistance

R

DS(on)

—

0.12

0.18

Ω

I

D = 5 A

V

GS = 10 V*

1

—

0.17

0.25

Ω

I

D = 5 A

V

GS = 4 V*

1

Forward transfer admittance

|y

fs|

3.5

6.0

—

S

I

D = 5 A

V

DS = 10 V*

1

Input capacitance

Ciss

—

400

—

pF

V

DS = 10 V

Output capacitance

Coss

—

220

—

pF

V

GS = 0

Reverse transfer capacitance

Crss

—

60

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—5

—ns

I

D = 5 A

Rise time

t

r

—

55

—

ns

V

GS = 10 V

Turn-off delay time

t

d(off)

—

140

—

ns

R

L = 6 Ω

Fall time

t

f

—90—ns

Body to drain diode forward

voltage

V

DF

—

1.0

—

V

I

F = 5 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

100

—

ns

I

F = 5 A, VGS = 0

dIF/dt = 50 A/

µs

Note:

1. Pulse test

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