3SK297 datasheet(8/11 Pages) HITACHI

Part #	3SK297

Description	Silicon N-Channel Dual Gate MOS FET

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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8 / 11 page

3SK297

8

10

5

4

3

2

1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

0

–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8

2

3 4 5

1.5

10

DS

Ω

G2S

D

V

= 6 V , V

= 3 V

I

= 10 mA , Zo = 50

S11 Parameter vs. Frequency

Condition:

50 to 1000 MHz (50 MHz step)

1.0

Scale: 0.5 / div.

0

°

30

°

60

°

90

°

120

°

150

°

180

°

–150

°

–90

°

–60

°

–30

°

–120

°

DS

Ω

G2S

D

V

= 6 V , V

= 3 V

I

= 10 mA , Zo = 50

S21 Parameter vs. Frequency

Condition:

50 to 1000 MHz (50 MHz step)

Scale: 0.002 / div.

0

°

30

°

60

°

90

°

120

°

150

°

180

°

–150

°

–90

°

–60

°

–30

°

–120

°

DS

Ω

G2S

D

V

= 6 V , V

= 3 V

I

= 10 mA , Zo = 50

S12 Parameter vs. Frequency

Condition:

50 to 1000 MHz (50 MHz step)

10

5

4

3

2

1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

0

–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8

2

3 4 5

1.5

10

DS

Ω

G2S

D

V

= 6 V , V

= 3 V

I

= 10 mA , Zo = 50

S22 Parameter vs. Frequency

Condition:

50 to 1000 MHz (50 MHz step)

1.0

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3SK297 Datasheet(PDF) 8 Page - Hitachi Semiconductor

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