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2SK3348 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK3348 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK3348 4 Static Drain to Source on State Resistance vs. Drain Current Forward Transfer Admittance vs. Drain Current 0 24 6 810 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 0.8 0.6 0.4 0.2 Pulse Test I = 100 mA D 10 mA 50 mA 5 4 3 2 1 –40 0 40 80 120 160 0 V =2.5V GS 10m A,50m A,100mA Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature I = -50m A D 4V -10m A Pulse Test 100m A Drain Current I (A) D 0.01 10 0.1 0.1 1.0 1.0 V = 2.5 V GS 4 V Pulse Test 0.2 0.5 2 5 0.02 0.05 0.2 0.5 Drain Current I (A) D 0.01 0.1 1.0 1.0 0.1 0.01 0.001 Tc = –25 °C 25 °C 75°C V = 10 V Pulse Test DS 0.02 0.05 0.2 0.5 0.002 0.005 0.02 0.05 0.2 0.5 |
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