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MC-4R128CPE6C-745 Datasheet(PDF) 8 Page - NEC

Part # MC-4R128CPE6C-745
Description  Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

MC-4R128CPE6C-745 Datasheet(HTML) 8 Page - NEC

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Preliminary Data Sheet M14807EJ2V0DS00
8
MC-4R128CPE6C
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
−0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
−0.5
VDD + 1.0
V
TSTORE
Storage temperature
−50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
VDD
Supply voltage
2.50
− 0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
− 0.13
2.5 + 0.25
V
1.8V controllers
1.8
− 0.1
1.8 + 0.2
VREF
Reference voltage
1.4
− 0.2
1.4 + 0.2
V
VIL
RSL input low voltage
VREF
− 0.5
VREF
− 0.2
V
VIH
RSL input high voltage
VREF + 0.2
VREF + 0.5
V
VIL,CMOS
CMOS input low voltage
−0.3
0.5VCMOS
− 0.25
V
VIH,CMOS
CMOS input high voltage
0.5VCMOS+0.25
VCMOS + 0.3
V
VOL,CMOS
CMOS output low voltage, IOL,CMOS = 1 mA
0.3
V
VOH,CMOS
CMOS output high voltage, IOH,CMOS =
−0.25 mA
VCMOS
− 0.3
V
IREF
VREF current, VREF,MAX
−80.0
+80.0
µA
ISCK,CMD
CMOS input leakage current, (0
≤ VCMOS ≤ VDD)
−80.0
+80.0
µA
ISIN,SOUT
CMOS input leakage current, (0
≤ VCMOS ≤ VDD)
−10.0
+10.0
µA


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