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2SK2980 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2980 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
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4 / 9 page  2SK2980 4 Main Characteristics 0.1 1 10 1.0 0.8 0.6 0.4 0.2 0 2 468 10 1.0 0.8 0.6 0.4 0.2 0 12 34 5 1.6 1.2 0.8 0.4 0 50 100 150 200 4 V 3 1 0.3 0.1 0.03 0.01 0.3 3 30 10 30 100 100 Ta = 25 °C 10 µs 100 µs 1 ms PW = 10 ms (1 shot) 2.5 V V = 1.5 V GS 2 V 1.8 V Tc = –25°C 75°C 25°C Ambient Temperature Ta (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics V = 10 V Pulse Test DS Operation in this area is limited by R DS(on) Test condition : When using alumina ceramic board (12.5 x 20 x 0.7 mm) DC Operation Pulse Test |
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Similar Description - 2SK2980 |
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