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MC-45D32CD641KFA-C75 Datasheet(PDF) 5 Page - NEC |
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MC-45D32CD641KFA-C75 Datasheet(HTML) 5 Page - NEC |
5 / 6 page Preliminary Data Sheet M14899EJ1V0DS00 5 MC-45D32CD641 Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 1 ms and then, execute Power on sequence and CBR (auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Condition Rating Unit Voltage on power supply pin relative to VSS VDD, VDDQ –0.5 to +3.6 V Voltage on input pin relative to VSS VT –0.5 to +3.6 V Short circuit output current IO 50 mA Power dissipation PD 12 W Storage temperature Tstg –55 to +125 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Condition MIN. TYP. MAX. Unit Supply voltage VDD 2.3 2.5 2.7 V Supply voltage for DQ, DQS VDDQ 2.3 2.5 2.7 V Input reference voltage VREF 0.49 × VDDQ 0.51 × VDDQV Termination voltage VTT VREF − 0.04 VREF VREF + 0.04 V High level dc input voltage VIH (DC) VREF + 0.15 VDD + 0.3 V Low level dc input voltage VIL (DC) −0.3 VREF − 0.15 V Input differential voltage (CLK and /CLK) VID (DC) 0.36 VDDQ + 0.6 V Input crossing point voltage (CLK and /CLK) VIX 0.5 × VDDQ–0.2 0.5 × VDDQ+0.2 V Operating ambient temperature TA 070 °C Capacitance (TA = 25 °°°°C, f = 100 MHz) Parameter Symbol Test condition MIN. TYP. MAX. Unit Input capacitance CI1 A0 - A11, BA0, BA1, /RAS, /CAS, /WE TBD TBD pF CI2 CK0 - CK2, /CK0 - /CK2 TBD TBD CI3 CKE0 TBD TBD CI4 /S0, /S1 TBD TBD Data input/output capacitance CI/O1 DM(0-7)/DQS(9-16), DQS0 - DQS7 TBD TBD pF CI/O2 DQ0 - DQ63 TBD TBD |
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