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2SK2788 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2788 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SK2788 4 Main Characteristics 0.1 0.3 1 3 10 30 100 5 4 3 2 1 0 2 468 10 5 4 3 2 1 0 24 68 10 6 V 2.0 1.5 1.0 0.5 0 50 100 150 200 10 3 1 0.3 0.1 0.03 0.01 Ta = 25 °C 1 ms PW = 10 ms (1shot) 100 µs 3.5 V 4 V 5 V V = 2 V GS 2.5 V 3 V Tc = 75 °C 25 °C –25 °C Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Pulse Test V = 10 V Pulse Test DS Operation in this area is limited by R DS(on) Test condition : When using the alumina ceramic board (12.5 x 20 x 0.7 mm) 10 V |
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Similar Description - 2SK2788 |
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