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2SK2788 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK2788 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK2788 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 60 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.12 0.16 Ω I D = 1 A, VGS = 10V* 1 resistance R DS(on) — 0.16 0.25 Ω I D = 1A, VGS = 4V* 1 Forward transfer admittance |y fs| 1.6 2.8 — S I D = 1A, VDS = 10V* 1 Input capacitance Ciss — 180 — pF V DS = 10V Output capacitance Coss — 90 — pF V GS = 0 Reverse transfer capacitance Crss — 30 — pF f = 1MHz Turn-on delay time t d(on) —9 —ns V GS = 10V, ID = 1A Rise time t r — 15 — ns R L = 30Ω Turn-off delay time t d(off) —40 — ns Fall time t f —35 — ns Body to drain diode forward voltage V DF — 0.9 — V I D = 2A, VGS = 0 Body to drain diode reverse recovery time t rr — 35 — ns I F = 2A, VGS = 0 di F/ dt = 50A/µs Notes: 1. Pulse test 2. Marking is “VY” |
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