IXBP5N160G datasheet(2/2 Pages) IXYS

Part #	IXBP5N160G

Description	Monolithic Bipolar MOS Transistor

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Manufacturer	IXYS [IXYS Corporation]

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IXBP 5N160 G

IXBH 5N160 G

Dimensions

Component

Symbol

Conditions

Maximum Ratings

T

VJ

-55...+150

°C

T

stg

-55...+125

°C

M

D

mounting torque

(TO-220)

0.6

Nm

(TO-247)

1.2

Nm

Symbol

Conditions

Characteristic Values

min.

typ.

max.

R

thCH

with heatsink compound

0.25

K/W

Weight

(TO-220)

2

g

(TO-247)

6

g

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780

0.800

B

20.80 21.46

0.819

0.845

C

15.75 16.26

0.610

0.640

D*

3.55

3.65

0.140

0.144

E

4.32

5.49

0.170

0.216

F

5.4

6.2

0.212

0.244

G

1.65

2.13

0.065

0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040

0.055

K

10.8

11.0

0.426

0.433

L

4.7

5.3

0.185

0.209

M

0.4

0.8

0.016

0.031

N

1.5

2.49

0.087

0.102

TO-247 AD

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

12.70

13.97

0.500

0.550

B

14.73

16.00

0.580

0.630

C

9.91

10.66

0.390

0.420

D

3.54

4.08

0.139

0.161

E

5.85

6.85

0.230

0.270

F

2.54

3.18

0.100

0.125

G

1.15

1.65

0.045

0.065

H

2.79

5.84

0.110

0.230

J

0.64

1.01

0.025

0.040

K

2.54

BSC

0.100

BSC

M

4.32

4.82

0.170

0.190

N

1.14

1.39

0.045

0.055

Q

0.35

0.56

0.014

0.022

R

2.29

2.79

0.090

0.110

TO-220 AB

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