IRFR2405PbF

IRFU2405PbF

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

S

D

G

Parameter

Max.

Units

56

†

40

†

A

Pulsed Drain Current



220

Power Dissipation

110

W

Linear Derating Factor

0.71

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

130

mJ

Avalanche Current



34

A

Repetitive Avalanche Energy



11

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

†

Description

12/03/04

www.irf.com

1

PD - 95369A

D-Pak

I-Pak

IRFR2405

IRFU2405

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.4

Junction-to-Ambient (PCB mount)*

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

* When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994