2SK2685 datasheet(1/10 Pages) HITACHI

Part #	2SK2685

Description	GaAs HEMT

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SK2685

GaAs HEMT

ADE-208-400

1st. Edition

Application

UHF low noise amplifier

Features

• Excellent low noise characteristics.

Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)

• High associated gain.

Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)

• High voltage.

V

DS = 6 or more voltage.

• Small package. (CMPAK-4)

Outline

1. Source

2. Gate

3. Source

4. Drain

CMPAK–4

1

4

3

2

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