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2SK2569 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2569 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK2569 4 0.5 0.4 0.3 0.2 0.1 0 24 6 8 10 I = 0.2 A D 0.1 A 0.05 A Pulse Test Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 10 2 5 1 0.2 0.5 0.01 0.02 0.05 0.1 0.2 0.5 1 V = 2.5 V GS 4 V Pulse Test Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current 10 8 6 4 2 –40 0 40 80 120 160 0 I = 0.2 A D 0.1 A 0.05 A V = 2.5 V GS 4 V 0.05, 0.1 A Pulse Test 0.2 A Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature 0.5 0.2 0.1 0.02 0.05 0.01 0.005 0.001 0.003 0.01 0.03 0.1 0.3 1 25 °C Tc = –25 °C 75 °C V = 10 V DS Pulse Test Drain Current I (A) D Forward Transfer Admittance vs. Drain Current |
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