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MC-458CB646EFB-A10 Datasheet(PDF) 1 Page - NEC |
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MC-458CB646EFB-A10 Datasheet(HTML) 1 Page - NEC |
1 / 16 page © 1997 MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE DATA SHEET The mark • • • • shows major revised points. Document No. M13049EJ7V0DS00 (7th edition) Date Published January 2000 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Description The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surface- mounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 8,388,608 words by 64 bits organization • Clock frequency and access time from CLK Part number /CAS latency Clock frequency Access time from CLK (MAX.) (MAX.) MC-458CB646EFB-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CB646EFB-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CB646PFB-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CB646PFB-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0 and BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and full page) • Programmable wrap sequence (sequential / interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • All DQs have 10 Ω ± 10 % of series resistor • Single 3.3 V ± 0.3 V power supply • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 168-pin dual in-line memory module (Pin pitch = 1.27 mm) • Unbuffered type • Serial PD 5 5 5 |
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