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2SK1934 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK1934 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 10 page 2SK1934 5 Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 8 12 16 20 0.2 0.4 0.6 0.8 1.0 Gate to Source Voltage V (V) GS Pulse Test 2 A I = 1 A D 5 A 0 Static Drain to Source on State Resistance vs. Drain Current 0.2 0.5 1 2 5 10 20 0.5 1 2 5 10 20 50 Drain Current I (A) D V = 10 V GS Pulse Test Static Drain to Source on State Resistance vs. Temperature Case Temperature T (°C) C 5 4 3 2 1 –40 0 40 80 120 160 Pulse Test I = 5 A D 0 2 A 1 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 0.2 0.5 1 5 10 2 Drain Current I (A) D Tc = 25°C –25°C Pulse Test V = 20 V DS 75°C |
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